EAR99 | |
Part Status | Active |
HTS | 8541.29.00.95 |
Automotive | Unknown |
PPAP | Unknown |
Product Category | Power MOSFET |
Configuration | Single Quad Drain Triple Source |
Process Technology | TMOS |
Channel Mode | Enhancement |
Channel Type | N |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 30 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Gate Threshold Voltage (V) | 2.2 |
Maximum Continuous Drain Current (A) | 30 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum IDSS (uA) | 1 |
Maximum Drain Source Resistance (mOhm) | 5@10V |
Typical Gate Charge @ Vgs (nC) | 7.5@4.5V|15.7@10V |
Typical Gate Charge @ 10V (nC) | 15.7 |
Typical Input Capacitance @ Vds (pF) | 951@15V |
Maximum Power Dissipation (mW) | 23000 |
Typical Fall Time (ns) | 4 |
Typical Rise Time (ns) | 2.5 |
Typical Turn-Off Delay Time (ns) | 18.5 |
Typical Turn-On Delay Time (ns) | 6.25 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Mounting | Surface Mount |
Package Height | 0.78 |
Package Width | 3 |
Package Length | 3 |
PCB changed | 8 |
Supplier Package | DFN-A EP |
Pin Count | 8 |
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